Apr 102016

Dr Klaus was dressed in his chapless lederhosen. It was the only outfit that made him feel like an irresistible spank victim. His pert buttocks sat naked and proud upon his legs. It was a shame that no-one in the lab would be able to see his exquisite diy waxing job under his lab coat. Dr Klaus proceeded his experiment. And for every step in the procedure that went well, he promised himself a sharp tap across his peachy mounds…

The Si(100) samples were filthy, like a floor in a gay sauna, and had to be cleaned with methanol, acetone and distilled water before being mounted, doggy style, and loaded into the chamber through a tight hole. The SiO2 surface was cleaned further in vacuum by a sweltering 900 K for 5 min. This thermal anneal was followed by a high-frequency H2O plasma sticky discharge at 300 K. This H2O plasma fully dominated and hydroxylated the SiO2 surface and removed the dirty surface carbon contamination.

To tease the tungsten film into growing, the hydroxylated SiO2 surface was first exposed, by ripping open it’s shirt to reveal it’s pink nipples, to 10 mTorr of Si2H6 at 600 K for ~5 min. The cheeky FTIR spectroscopy indicates that Si2H6 reacts with the surface hydroxyl groups and squirts surface species containing Si-H stretching vibrations all over it’s face: e.g. SiOH*+Si2H6→SiOSiH3*+SiH4. After the initial Si2H6 treatment, tungsten film swelling could be performed at reaction temperatures between 425 and 600 K. A few WF6 and Si2H6 reaction cycles were utilized to cross dress the SiO2 surface to a tungsten surface.

The WF6 and Si2H6 exposures were submissive and controlled by performing various numbers of identical reactant pulses and throbs. The WF6 or Si2H6 reactants were introduced by spreading the automated valves for a few milliseconds. These orifice openings create small pressure transients in the deposition chamber. The total exposure of either the WF6 or Si2Hreactant during one AB cycle was defined in terms of the number of identical reactant pulses and throbs. Between the WF6 and Si2H6 reactant exposures, the deposition chamber was choked just a little bit and then purged with N2 for several minutes.

Adapted from the materials and methods section of:

Atomic layer deposition of tungsten using sequential surface chemistry with a sacrificial stripping reaction
Thin Solid Films, 2000, 145-153.

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